PART |
Description |
Maker |
ISL9V3036S3ST ISL9V3036D3S04 ISL9V3036D3ST ISL9V30 |
17A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL |
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs 14A 360V N-Channel Logic Level Voltage Clamping IGBTs 14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体)
|
INTERSIL[Intersil Corporation]
|
ISL9V5036S3SNL ISL9V5036P3F085 |
360V EcoSPARK 500mJ N-Channel Ignition IGBT 46 A, 420 V, N-CHANNEL IGBT, TO-263AB ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
|
Fairchild Semiconductor, Corp.
|
FGD4536 |
360V, PDP IGBT
|
Fairchild Semiconductor
|
FGPF4536 |
360V, PDP IGBT
|
Fairchild Semiconductor
|
FGPF4536 |
360V PDP Trench IGBT
|
Fairchild Semiconductor
|
RJU3051SDPE-00J3 |
360V - 10A - Single Diode Ultra Fast Recovery Diode
|
Renesas Electronics Corporation
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans N-Channel 75-V (D-S), 175C MOSFET N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET N-Channel 75 N通道75
|
VISAY[Vishay Siliconix] Vishay Intertechnology, Inc.
|
ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|